* Max rDS(on) = 50 m: @ VGS = -10 V, ID = -4A
* Max rDS(on) = 75 m: @ VGS = -4.5 V, ID = -3.4A
* Low Gate Charge
* High performance trench technology for extremely low rDS(on)
* RoHS Compliant S D D 1 PIN 1 G D D SuperSOTTM-6 2 3 Absolute Maximum Ratings
FDC658AP Datasheet (245.87 KB)
FDC658AP
Fairchild Semiconductor
245.87 KB
Mosfet.
FDC658AP Single P-Channel Logic Level PowerTrench® MOSFET
August 2015
FDC658AP
Single P-Channel Logic Level PowerTrench® MOSFET -30V, -4A, 50m:
Gen.
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