FDC658AP - MOSFET
FDC658AP Features
* Max rDS(on) = 50 m: @ VGS = -10 V, ID = -4A
* Max rDS(on) = 75 m: @ VGS = -4.5 V, ID = -3.4A
* Low Gate Charge
* High performance trench technology for extremely low rDS(on)
* RoHS Compliant S D D 1 PIN 1 G D D SuperSOTTM-6 2 3 Absolute Maximum Ratings
