FDC6561AN Datasheet, Mosfet, Fairchild Semiconductor

FDC6561AN Features

• Mosfet 2.5 A, 30 V. RDS(ON) = 0.095 Ω @ VGS = 10 V RDS(ON) = 0.145 Ω @ VGS = 4.5 V Very fast switching. Low gate charge (2.1nC typical). SuperSOTTM-6 package: small footprint (72% smaller than

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FDC6561AN

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Fairchild Semiconductor

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📄 Datasheet

Description:

Dual n-channel mosfet. Features 2.5 A, 30 V. RDS(ON) = 0.095 Ω @ VGS = 10 V RDS(ON) = 0.145 Ω @ VGS = 4.5 V Very fast switching. Low gate charge (2.1nC typi

FDC6561AN Application

• Applications where small size is desireable but especially low cost DC/DC conversion in battery powered systems. SOT-23 SuperSOTTM-6 SuperSOTTM-8

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FDC6561AN

Fairchild Semiconductor

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