FDC6561AN - Dual N-Channel MOSFET
FDC6561AN Features
* 2.5 A, 30 V. RDS(ON) = 0.095 Ω @ VGS = 10 V RDS(ON) = 0.145 Ω @ VGS = 4.5 V Very fast switching. Low gate charge (2.1nC typical). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). These N-Channel Logic Level MOSFETs are produced using Fairchild Semicon
