FDC6561AN Datasheet - Fairchild Semiconductor

FDC6561AN, Dual N-Channel MOSFET

April 1999 FDC6561AN Dual N-Channel Logic Level PowerTrenchTM MOSFET General .
Features 2.

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Datasheet Details

Part number:

FDC6561AN

Manufacturer:

Fairchild Semiconductor

File Size:

256.75 KB

Description:

Dual N-Channel MOSFET

Features

* 2.5 A, 30 V. RDS(ON) = 0.095 Ω @ VGS = 10 V RDS(ON) = 0.145 Ω @ VGS = 4.5 V Very fast switching. Low gate charge (2.1nC typical). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). These N-Channel Logic Level MOSFETs are produced using Fairchild Semicon

Applications

* where small size is desireable but especially low cost DC/DC conversion in battery powered systems. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D2 S1 D1 1 .56 G2 S2 4 3 5 2 SuperSOT TM-6 pin 1 G1 6 1 Absolute Maximum Ratings Symbol Parameter TA = 25°C unless otherwise no

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FDC6561AN Dual N-Channel MOSFET Fairchild Semiconductor

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