FDC658P Datasheet - Fairchild Semiconductor

FDC658P Single P-Channel MOSFET

This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for notebook computer ap.

FDC658P Features

* -4 A, -30 V. RDS(ON) = 0.050 Ω @ VGS = -10 V RDS(ON) = 0.075 Ω @ VGS = -4.5 V. Low gate charge (8nC typical). High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). SOT-23 SuperSOTTM-6 SuperSOT

FDC658P Datasheet (249.45 KB)