FDC6506P Dual P-Channel Logic Level PowerTrench MOSFET

Fairchild Semiconductor

Description

FDC6506P February 1999 FDC6506P Dual P-Channel Logic Level PowerTrench™ MOSFET General .
These P-Channel logic level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to min.

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Datasheet Specifications

Part number: FDC6506P
Manufacturer: Fairchild Semiconductor
File Size: 204.08 KB
Datasheet: FDC6506P_FairchildSemiconductor.pdf
Description: Dual P-Channel Logic Level PowerTrench MOSFET

Features

* -1.8 A, -30 V. RDS(on) = 0.170 Ω @ VGS = -10 V RDS(on) = 0.280 Ω @ VGS = -4.5 V
* Low gate charge (2.3nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller

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FDC6506P Dual P-Channel Logic Level PowerTrench MOSFET Fairchild Semiconductor

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