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FDC6506P - Dual P-Channel Logic Level PowerTrench MOSFET

Datasheet Summary

Description

These P-Channel logic level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

Features

  • -1.8 A, -30 V. RDS(on) = 0.170 Ω @ VGS = -10 V RDS(on) = 0.280 Ω @ VGS = -4.5 V.
  • Low gate charge (2.3nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).

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Datasheet Details

Part number FDC6506P
Manufacturer Fairchild Semiconductor
File Size 204.08 KB
Description Dual P-Channel Logic Level PowerTrench MOSFET
Datasheet download datasheet FDC6506P Datasheet
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FDC6506P February 1999 FDC6506P Dual P-Channel Logic Level PowerTrench™ MOSFET General Description These P-Channel logic level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical. Features • -1.8 A, -30 V. RDS(on) = 0.170 Ω @ VGS = -10 V RDS(on) = 0.280 Ω @ VGS = -4.5 V • • • • Low gate charge (2.3nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON).
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