FDC654P

P-Channel MOSFET

Fairchild Semiconductor

FDC654P Features

* -3.6 A, -30 V. RDS(ON) = 0.075 Ω @ VGS = -10 V RDS(ON) = 0.125 Ω @ VGS = -4.5 V. SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. SOT

FDC654P General Description

These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage app.

FDC654P Datasheet (74.61 KB)

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Datasheet Details

Part number:

FDC654P

Manufacturer:

Fairchild Semiconductor

File Size:

74.61 KB

Description:

P-channel mosfet.

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FDC654P P-Channel MOSFET Fairchild Semiconductor

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FDC654P Features

FDC654P General Description

Datasheet Details

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