FDC654P P-Channel MOSFET

Fairchild Semiconductor

Description

March 1998 FDC654P P-Channel Enhancement Mode Field Effect Transistor General .
These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS techno.

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Datasheet Specifications

Part number: FDC654P
Manufacturer: Fairchild Semiconductor
File Size: 74.61 KB
Datasheet: FDC654P_FairchildSemiconductor.pdf
Description: P-Channel MOSFET

Features

* -3.6 A, -30 V. RDS(ON) = 0.075 Ω @ VGS = -10 V RDS(ON) = 0.125 Ω @ VGS = -4.5 V. SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. SOT

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FDC654P P-Channel MOSFET Fairchild Semiconductor

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