FDC855N mosfet equivalent, single n-channel powertrench mosfet.
* Max rDS(on) = 27mΩ at VGS = 10V, ID = 6.1A
* Max rDS(on) = 36mΩ at VGS = 4.5V, ID = 5.3A
* SuperSOTTM -6 package: small footprint (72% smaller than standard.
Utilizing Fairchild Semiconductor’s advanced PowerTrench® process, this device possesses minimized on-state resistance .
This N-Channel Logic Level MOSFET is an efficient solution for low voltage and battery powered applications. Utilizing Fairchild Semiconductor’s advanced PowerTrench® process, this device possesses minimized on-state resistance to optimize the power .
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