FDC855N Key Features
- Max rDS(on) = 27mΩ at VGS = 10V, ID = 6.1A
- Max rDS(on) = 36mΩ at VGS = 4.5V, ID = 5.3A
- SuperSOTTM -6 package: small footprint (72% smaller than standard SO-8; low profile (1mm thick)
- RoHS pliant
- Part: FDC855N
- Description: Single N-Channel PowerTrench MOSFET
- Manufacturer: Fairchild Semiconductor
- Size: 251.80 KB
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