Datasheet4U Logo Datasheet4U.com

FDC855N - Single N-Channel PowerTrench MOSFET

General Description

This N-Channel Logic Level MOSFET is an efficient solution for low voltage and battery powered applications.

Utilizing Fairchild Semiconductor’s advanced PowerTrench® process, this device possesses minimized on-state resistance to optimize the power consumption.

Key Features

  • Max rDS(on) = 27mΩ at VGS = 10V, ID = 6.1A.
  • Max rDS(on) = 36mΩ at VGS = 4.5V, ID = 5.3A.
  • SuperSOTTM -6 package: small footprint (72% smaller than standard SO-8; low profile (1mm thick).
  • RoHS Compliant tm ® General.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDC8601 N-Channel MOSFET ON Semiconductor
FDC8601 N-Channel 100V MOSFET VBsemi
FDC8602 Dual N-Channel MOSFET ON Semiconductor
FDC86244 N-Channel MOSFET ON Semiconductor
FDC-xx EMC Filters - Single-Phase Filters - FD/FDC/FDV IEC Connector Filter Premo

Other Datasheets by Fairchild (onsemi)

Part Number Description
FDC8601 N-Channel Shielded Gate PowerTrench MOSFET
FDC8602 Dual N-Channel Shielded Gate PowerTrench MOSFET
FDC86244 N-Channel Power Trench MOSFET
FDC8878 N-Channel MOSFET
FDC8884 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDC855N N-Channel, Logic Level, PowerTrench® MOSFET January 2008 FDC855N Single N-Channel, Logic Level, PowerTrench MOSFET 30V, 6.1A, 27mΩ Features „ Max rDS(on) = 27mΩ at VGS = 10V, ID = 6.1A „ Max rDS(on) = 36mΩ at VGS = 4.5V, ID = 5.3A „ SuperSOTTM -6 package: small footprint (72% smaller than standard SO-8; low profile (1mm thick). „ RoHS Compliant tm ® General Description This N-Channel Logic Level MOSFET is an efficient solution for low voltage and battery powered applications. Utilizing Fairchild Semiconductor’s advanced PowerTrench® process, this device possesses minimized on-state resistance to optimize the power consumption. They are ideal for applications where in-line power loss is critical.