* 34 A, 100 V. RDS(ON) = 0.030 Ω @ VGS = 10 V RDS(ON) = 0.033 Ω @ VGS = 6 V
* Low gate charge (57 nC typical)
* Fast switching speed
* High performance t.

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOS.

FDD3672

FDD3672_F085

FDD3680

FDD3682

FDD3682-F085

FDD3690

FDD306P

FDD3510H

FDD3570

FDD3580

FDD3706

FDD3860

FDD390N15A