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FDD3680 - N-Channel MOSFET

FDD3680 Description

MOSFET * N-Channel, POWERTRENCH) DATA SHEET www.onsemi.com VDSS 100 V RDS(ON) MAX 46 mW @ 10 V ID MAX 25 A 100 V FDD3680 General Descrip.
This N. Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or convent.

FDD3680 Features

* 25 A, 100 V. RDS(ON) = 46 mW @ VGS = 10 V RDS(ON) = 51 mW @ VGS = 6 V
* Low Gate Charge (38 nC Typical)
* Fast Switching Speed
* High Performance Trench Technology for Extremely Low RDS(ON)
* High Power and Current Handling Capability ABSOLUTE MAXIMUM RATIN

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