FDD3680 Datasheet - ON Semiconductor

FDD3680 N-Channel MOSFET

FDD3680 Features

* 25 A, 100 V. RDS(ON) = 46 mW @ VGS = 10 V RDS(ON) = 51 mW @ VGS = 6 V

* Low Gate Charge (38 nC Typical)

* Fast Switching Speed

* High Performance Trench Technology for Extremely Low RDS(ON)

* High Power and Current Handling Capability ABSOLUTE MAXIMUM RATIN

Datasheet Details

FDD3680

340.54 KB

N-channel mosfet.

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FDD3680 N-Channel MOSFET ON Semiconductor

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