FDD306P

MOSFET

Fairchild Semiconductor

FDD306P Features

* 6.7 A,

* 12 V. RDS(ON) = 28 mΩ @ VGS =

* 4.5 V RDS(ON) = 41 mΩ @ VGS =

* 2.5 V RDS(ON) = 90 mΩ @ VGS =

* 1.8 V

* Fast switching speed

* High performance trench technology for extremely low RDS(ON)

* High power and current handling capability

FDD306P General Description

This P-Channel 1.8V Speciﬁed MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management. D G S TO-252 S G D Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDSS VGSS ID PD Drain-Source Voltage Gate-Source Volta.

FDD306P Datasheet (675.50 KB)

FDD306P Datasheet Preview — Preview of FDD306P PDF

Datasheet Details

Part number:

FDD306P

Manufacturer:

Fairchild Semiconductor

File Size:

675.50 KB

Description:

Mosfet.

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FDD306P MOSFET Fairchild Semiconductor

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FDD306P Features

FDD306P General Description

Datasheet Details

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