FDD306P - MOSFET
This P-Channel 1.8V Specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management.
D G S TO-252 S G D Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDSS VGSS ID PD Drain-Source Voltage Gate-Source Volta
FDD306P Features
* 6.7 A,
* 12 V. RDS(ON) = 28 mΩ @ VGS =
* 4.5 V RDS(ON) = 41 mΩ @ VGS =
* 2.5 V RDS(ON) = 90 mΩ @ VGS =
* 1.8 V
* Fast switching speed
* High performance trench technology for extremely low RDS(ON)
* High power and current handling capability
