Datasheet4U Logo Datasheet4U.com

FDD306P Datasheet - Fairchild Semiconductor

FDD306P MOSFET

This P-Channel 1.8V Specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management. D G S TO-252 S G D Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDSS VGSS ID PD Drain-Source Voltage Gate-Source Volta.

FDD306P Features

* 6.7 A,

* 12 V. RDS(ON) = 28 mΩ @ VGS =

* 4.5 V RDS(ON) = 41 mΩ @ VGS =

* 2.5 V RDS(ON) = 90 mΩ @ VGS =

* 1.8 V

* Fast switching speed

* High performance trench technology for extremely low RDS(ON)

* High power and current handling capability

FDD306P-FairchildSemiconductor.pdf

Preview of FDD306P PDF
FDD306P Datasheet Preview Page 2 FDD306P Datasheet Preview Page 3

Datasheet Details

Part number:

FDD306P

Manufacturer:

Fairchild Semiconductor

File Size:

675.50 KB

Description:

Mosfet.

📁 Related Datasheet

FDD3510H Dual N&P-Channel MOSFET (Fairchild Semiconductor)

FDD3510H Dual N & P-Channel Power MOSFET (ON Semiconductor)

FDD3570 80V N-Channel PowerTrench MOSFET (Fairchild Semiconductor)

FDD3580 80V N-Channel PowerTrench MOSFET (Fairchild Semiconductor)

FDD3670 100V N-Channel PowerTrench MOSFET (Fairchild Semiconductor)

FDD3670 N-Channel MOSFET (ON Semiconductor)

FDD3672 N-Channel MOSFET (Fairchild Semiconductor)

FDD3672_F085 N-Channel UltraFET Trench MOSFET (Fairchild Semiconductor)

TAGS

FDD306P FDD306P MOSFET Fairchild Semiconductor

FDD306P Distributor