FDD306P - MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDD306P
Manufacturer	Fairchild Semiconductor
File Size	675.50 KB
Description	MOSFET
Datasheet	FDD306P Datasheet
Additional preview pages of the FDD306P datasheet.

Product details

Description

This P-Channel 1.8V Speciﬁed MOSFET uses Fairchild’s advanced low voltage PowerTrench process. Continuous Pulsed Power Dissipation for Single Operation TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA RθJA Ther

Features

6.7 A,.
12 V. RDS(ON) = 28 mΩ @ VGS =.
4.5 V RDS(ON) = 41 mΩ @ VGS =.
2.5 V RDS(ON) = 90 mΩ @ VGS =.
1.8 V.
Fast switching speed.
High performance trench technology for extremely low RDS(ON).
High power and current handling capability.

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Published: Jan 11, 2017 |