Datasheet4U Logo Datasheet4U.com

FDD3580

80V N-Channel PowerTrench MOSFET

FDD3580 Features

* faster switching and lower gate change than other MOSFETs with comparable RDS(ON) specifications resulting in DC/DC power supply designs with higher overall efficiency. Features

* 7.7 A, 80 V. RDS(ON) = 29 mΩ @ VGS = 10 V RDS(ON) = 33 mΩ @ VGS = 6 V

* Low gate charge (34nC typical)

FDD3580 Datasheet (120.89 KB)

Preview of FDD3580 PDF

Datasheet Details

Part number:

FDD3580

Manufacturer:

Fairchild Semiconductor

File Size:

120.89 KB

Description:

80v n-channel powertrench mosfet.

📁 Related Datasheet

FDD3510H - Dual N&P-Channel MOSFET (Fairchild Semiconductor)
FDD3510H Dual N & P-Channel PowerTrench® MOSFET April 2008 FDD3510H Dual N & P-Channel PowerTrench® MOSFET Features Q1: N-Channel „ Max rDS(on) = 80.

FDD3510H - Dual N & P-Channel Power MOSFET (ON Semiconductor)
FDD3510H Dual N & P-Channel PowerTrench ® MOSFET FDD3510H Dual N & P-Channel PowerTrench® MOSFET N-Channel: 80V, 13.9A, 80mΩ P-Channel: -80V, -9.4A, .

FDD3570 - 80V N-Channel PowerTrench MOSFET (Fairchild Semiconductor)
FDD3570 February 2000 PRELIMINARY FDD3570 80V N-Channel PowerTrench MOSFET General Description This N-Channel Logic level MOSFET has been designed .

FDD306P - MOSFET (Fairchild Semiconductor)
FDD306P P-Channel 1.8V Specified PowerTrench® MOSFET March 2015 FDD306P P-Channel 1.8V Specified PowerTrench® MOSFET Features ■ –6.7 A, –12 V. RDS(O.

FDD3670 - 100V N-Channel PowerTrench MOSFET (Fairchild Semiconductor)
FDD3670 January 2000 ADVANCE INFORMATION FDD3670 100V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed spec.

FDD3670 - N-Channel MOSFET (ON Semiconductor)
FDD3670 FDD3670 100V N-Channel PowerTrench® MOSFET Features General Description This N-Channel MOSFET has been designed specifically to improve the.

FDD3672 - N-Channel MOSFET (Fairchild Semiconductor)
FDD3672 FDD3672 March 2015 N-Channel UltraFET® Trench MOSFET 100V, 44A, 28mΩ Features • rDS(ON) = 24mΩ (Typ.), VGS = 10V, ID = 44A • Qg(tot) = 24n.

FDD3672_F085 - N-Channel UltraFET Trench MOSFET (Fairchild Semiconductor)
FDD3672_F085 N-Channel UltraFET Trench MOSFET March 2011 FDD3672_F085 N-Channel UltraFET Trench MOSFET 100V, 44A, 28mΩ Features „ Typ rDS(on) = 24.

TAGS

FDD3580 80V N-Channel PowerTrench MOSFET Fairchild Semiconductor

Image Gallery

FDD3580 Datasheet Preview Page 2 FDD3580 Datasheet Preview Page 3

FDD3580 Distributor