FDD3510H - Dual N&P-Channel MOSFET
These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
Applications * Inverter * H-Bridge
FDD3510H Features
* Q1: N-Channel
* Max rDS(on) = 80mΩ at VGS = 10V, ID = 4.3A
* Max rDS(on) = 88mΩ at VGS = 6V, ID = 4.1A Q2: P-Channel
* Max rDS(on) = 190mΩ at VGS = -10V, ID = -2.8A
* Max rDS(on) = 224mΩ at VGS = -4.5V, ID = -2.6A
* 100% UIL Tested
* RoHS Compliant N-
