FDD3510H Datasheet, Mosfet, Fairchild Semiconductor

FDD3510H Features

• Mosfet Q1: N-Channel
• Max rDS(on) = 80mΩ at VGS = 10V, ID = 4.3A
• Max rDS(on) = 88mΩ at VGS = 6V, ID = 4.1A Q2: P-Channel
• Max rDS(on) = 190mΩ at VGS = -10V, ID = -2

PDF File Details

Part number:

FDD3510H

Manufacturer:

Fairchild Semiconductor

File Size:

451.23kb

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📄 Datasheet

Description:

Dual n&p-channel mosfet. These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process

FDD3510H Application

• Applications
• Inverter
• H-Bridge D1 D1/D2 D2 G1 G2 S2 G1 S1 Dual DPAK 4L S1 N-Channel G2 S2 P-Channel MOSFET Maximum Ratings

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