FDD3510H

Dual N&P-Channel MOSFET

Fairchild Semiconductor

FDD3510H Features

* Q1: N-Channel

* Max rDS(on) = 80mΩ at VGS = 10V, ID = 4.3A

* Max rDS(on) = 88mΩ at VGS = 6V, ID = 4.1A Q2: P-Channel

* Max rDS(on) = 190mΩ at VGS = -10V, ID = -2.8A

* Max rDS(on) = 224mΩ at VGS = -4.5V, ID = -2.6A

* 100% UIL Tested

* RoHS Compliant N-

FDD3510H General Description

These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Applications

* Inverter

* H-Bridge .

FDD3510H Datasheet (451.23 KB)

FDD3510H Datasheet Preview — Preview of FDD3510H PDF

Datasheet Details

Part number:

FDD3510H

Manufacturer:

Fairchild Semiconductor

File Size:

451.23 KB

Description:

Dual n&p-channel mosfet.

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FDD3510H Dual N &P-Channel MOSFET Fairchild Semiconductor

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FDD3510H Features

FDD3510H General Description

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