FDD3510H - Dual N&P-Channel MOSFET

Fairchild Semiconductor

FDD3510H Datasheet Preview — Preview of FDD3510H PDF

Datasheet Details

Part number	FDD3510H
Manufacturer	Fairchild ↗ Semiconductor
File Size	451.23 KB
Description	Dual N&P-Channel MOSFET
Datasheet	FDD3510H_FairchildSemiconductor.pdf

FDD3510H Product details

Description

These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Inverter H-Bridge D1 D1/D2 D2 G1 G2 S2 G1 S1 Dual DPAK 4L S1 N-Channel G2 S2 P-Channel MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID Parameter Drain to Source Voltage Gate to Source Vo

Features

Q1: N-Channel.
Max rDS(on) = 80mΩ at VGS = 10V, ID = 4.3A.
Max rDS(on) = 88mΩ at VGS = 6V, ID = 4.1A Q2: P-Channel.
Max rDS(on) = 190mΩ at VGS = -10V, ID = -2.8A.
Max rDS(on) = 224mΩ at VGS = -4.5V, ID = -2.6A.
100% UIL Tested.
RoHS Compliant N-Channel: 80V, 13.9A, 80mΩ P-Channel: -80V, -9.4A, 190mΩ General.

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Published: Dec 13, 2010 |