FDD3860 Datasheet, Mosfet, ON Semiconductor

FDD3860 Features

• Mosfet
• Max rDS(on) = 36 mΩ at VGS = 10 V, ID = 5.9 A
• High Performance Trench Technology for Extremely Low rDS(on)
• 100% UIL Tested
• RoHS Compliant Genera

PDF File Details

Part number:

FDD3860

Manufacturer:

ON Semiconductor ↗

File Size:

337.36kb

Download:

📄 Datasheet

Description:

N-channel powertrench mosfet. This N-Channel MOSFET is rugged gate version of ON Semiconductor‘s advanced Power Trench® process. This part is tailored for low rDS(

FDD3860 Application

• Applications Applications
• DC-AC Conversion
• Synchronous Rectifier G S D DT O-P-2A5K2 (T O -25 2) D G S MOSFET Maximum Rating

TAGS

FDD3860

ON Semiconductor

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