FDD3860

N-Channel PowerTrench MOSFET

ON Semiconductor

FDD3860 Features

* Max rDS(on) = 36 mΩ at VGS = 10 V, ID = 5.9 A

* High Performance Trench Technology for Extremely Low rDS(on)

* 100% UIL Tested

* RoHS Compliant General Description This N-Channel MOSFET is rugged gate version of ON Semiconductor‘s advanced Power Trench® process. Th

FDD3860 General Description

This N-Channel MOSFET is rugged gate version of ON Semiconductor‘s advanced Power Trench® process. This part is tailored for low rDS(on) and low Qg figure of merit, with avalanche ruggedness for a wide range of switching applications. Applications

* DC-AC Conversion

* Synchronous Rec.

FDD3860 Datasheet (337.36 KB)

FDD3860 Datasheet Preview — Preview of FDD3860 PDF

Datasheet Details

Part number:

FDD3860

Manufacturer:

ON Semiconductor ↗

File Size:

337.36 KB

Description:

N-channel powertrench mosfet.

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FDD3860 N-Channel PowerTrench MOSFET ON Semiconductor

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FDD3860 Features

FDD3860 General Description

Datasheet Details

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FDD3860 Distributor