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FDD6635 - 35V N-CHANNEL MOSFET

Description

This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench technology to deliver low Rdson and optimized Bvdss capability to offer superior performance benefit in the applications.

Inverter Power Supplies

Features

  • 59 A, 35 V RDS(ON) = 10 mΩ @ VGS = 10 V RDS(ON) = 13 mΩ @ VGS = 4.5 V.
  • Fast Switching.
  • RoHS compliant D G S DTO-P-2A5K2 (TO-252) D G S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VDS(Avalanche) VGSS ID Parameter Drain-Source Voltage Drain-Source Avalanche Voltage (maximum) (Note 4) Gate-Source Voltage Continuous Drain Current @TC=25°C (Note 3) @TA=25°C (Note 1a) Pulsed (Note 1a) Ratings 35 40 ±20 59 15 100 EAS PD TJ, TSTG S.

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FDD6635 35V N-Channel PowerTrench® MOSFET March 2015 FDD6635 35V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench technology to deliver low Rdson and optimized Bvdss capability to offer superior performance benefit in the applications. Applications • Inverter • Power Supplies Features • 59 A, 35 V RDS(ON) = 10 mΩ @ VGS = 10 V RDS(ON) = 13 mΩ @ VGS = 4.
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