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Fairchild Semiconductor Electronic Components Datasheet

FDD8878 Datasheet

N-Channel PowerTrench MOSFET

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January 2005
FDD8878 / FDU8878
N-Channel PowerTrench® MOSFET
30V, 40A, 15m
Features
rDS(ON) = 15m, VGS = 10V, ID = 35A
rDS(ON) = 18.5m, VGS = 4.5V, ID = 35A
High performance trench technology for extremely low
rDS(ON)
Low gate charge
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(ON) and fast switching speed.
High power and current handling capability
Applications
DC/DC converters
D
G
S
DTO-P-2A5K2
(TO-252)
GDS
I-PAK
(TO-251AA)
D
G
S
©2005 Fairchild Semiconductor Corporation
FDD8878 / FDU8878 Rev. A3
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FDD8878 Datasheet

N-Channel PowerTrench MOSFET

No Preview Available !

Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V) (Note 1)
Continuous (TC = 25oC, VGS = 4.5V) (Note 1)
Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 52oC/W)
Pulsed
EAS Single Pulse Avalanche Energy (Note 2)
Power dissipation
PD Derate above 25oC
TJ, TSTG Operating and Storage Temperature
Ratings
30
±20
40
36
11
Figure 4
25
40
0.27
-55 to 175
Units
V
V
A
A
A
A
mJ
W
W/oC
oC
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case TO-252, TO-251
Thermal Resistance Junction to Ambient TO-252, TO-251
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
3.75
100
52
oC/W
oC/W
oC/W
Package Marking and Ordering Information
Device Marking
FDD8878
FDU8878
FDD8878
FDU8878
Device
FDD8878
FDU8878
FDD8878_NL (Note 3)
FDU8878_NL (Note 3)
Package
TO-252AA
TO-251AA
TO-252AA
TO-251AA
Reel Size
13”
Tube
13”
Tube
Tape Width
12mm
N/A
12mm
N/A
Quantity
2500 units
75 units
2500 units
75 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
VDS = 24V
VGS = 0V
TC = 150oC
VGS = ±20V
On Characteristics
VGS(TH)
Gate to Source Threshold Voltage
rDS(ON)
Drain to Source On Resistance
VGS = VDS, ID = 250µA
ID = 35A, VGS = 10V
ID = 35A, VGS = 4.5V
ID = 35A, VGS = 10V,
TJ = 175oC
Min Typ Max Units
30 - - V
- -1
µA
- - 250
- - ±100 nA
1.2 - 2.5 V
- 0.011 0.015
- 0.014 0.0185
- 0.018 0.024
©2005 Fairchild Semiconductor Corporation
FDD8878 / FDU8878 Rev. A3
2
www.fairchildsemi.com


Part Number FDD8878
Description N-Channel PowerTrench MOSFET
Maker Fairchild Semiconductor
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FDD8878 Datasheet PDF






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