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FDD8878 - N-Channel MOSFET

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

Key Features

  • rDS(ON) = 15mΩ, VGS = 10V, ID = 35A rDS(ON) = 18.5mΩ, VGS = 4.5V, ID = 35A High performance trench technology for extremely low General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDD8878 / FDU8878 N-Channel PowerTrench® MOSFET March 2015 FDD8878 / FDU8878 N-Channel PowerTrench® MOSFET 30V, 40A, 15mΩ Features rDS(ON) = 15mΩ, VGS = 10V, ID = 35A rDS(ON) = 18.5mΩ, VGS = 4.5V, ID = 35A High performance trench technology for extremely low General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. rDS(ON) Low gate charge High power and current handling capability Application „ DC / DC Converters RoHS Compliant D G S D-PAK (TO-252) GDS I-PAK (TO-251AA) D G S ©2008 Fairchild Semiconductor Corporation FDD8878 / FDU8878 Rev.1.2 1 www.