*
  –2 A,
  –12 V. RDS(ON) = 110 mΩ @ VGS =
  –4.5 V RDS(ON) = 150 mΩ @ VGS =
  –2.5 V RDS(ON) = 215 mΩ @ VGS .

Features
*
  –2 A,
  –12 V. RDS(ON) = 110 mΩ @ VGS =
  –4.5 V RDS(ON) = .

This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features
*
  –2 A,
  –12 V. RDS(ON) = 110 mΩ @ VGS =

FDG332PZ

FDG311N

FDG312P

FDG313N

FDG314P

FDG315N

FDG316P

FDG326P

FDG327N

FDG327NZ

FDG328P

FDG329N

FDG361N