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FDMC8010ET30 Datasheet MOSFET

Manufacturer: Fairchild (now onsemi)

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General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance.

This device is well suited for applications where ultra low rDS(on) is required in small spaces such as High performance VRM, POL and Oring functions.

Applications „ DC - DC Buck Converters „ Point of Load „ High Efficiency Load Switch and Low Side Switching „ Oring FET Pin 1 Pin 1 SS SG S S D D DDDD Top Bottom Power 33 SD GD MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parame

Overview

FDMC8010ET30 N-Channel PowerTrench® MOSFET FDMC8010ET30 N-Channel PowerTrench® MOSFET 30 V, 174 A, 1.

Key Features

  • Extended TJ rating to 175°C.
  • Max rDS(on) = 1.3 mΩ at VGS = 10 V, ID = 30 A.
  • Max rDS(on) = 1.8 mΩ at VGS = 4.5 V, ID = 25 A.
  • High performance technology for extremely low rDS(on).
  • Termination is Lead-free and RoHS Compliant January 2015 General.

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