FDMC8010ET30 mosfet equivalent, mosfet.
* Extended TJ rating to 175°C
* Max rDS(on) = 1.3 mΩ at VGS = 10 V, ID = 30 A
* Max rDS(on) = 1.8 mΩ at VGS = 4.5 V, ID = 25 A
* High performance technolo.
where ultra low rDS(on) is required in small spaces such as High performance VRM, POL and Oring functions.
Applications
.
Image gallery
Download