FDMC8010DC Overview
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient.
Key Features
- Dual CoolTM Top Side Cooling PQFN package
- Max rDS(on) = 1.28 mΩ at VGS = 10 V, ID = 37 A
- Max rDS(on) = 1.74 mΩ at VGS = 4.5 V, ID = 32 A
- High Performance Technology for Extremely Low rDS(on)
- RoHS Compliant
