FDMC8010DC datasheet, mosfet equivalent, Fairchild Semiconductor

datasheet Download (Size : 467.37KB)

FDMC8010DC Features and benefits

* Dual CoolTM Top Side Cooling PQFN package
* Max rDS(on) = 1.28 mΩ at VGS = 10 V, ID = 37 A
* Max rDS(on) = 1.74 mΩ at VGS = 4.5 V, ID = 32 A
* High Perf.

FDMC8010DC Application

* Load Switch
* Motor Bridge Switch
* Synchronous Rectifier DD D D G SS S Pin 1 Top Dual CoolTM 33 Bo.

FDMC8010DC Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching pe.

Image gallery