FDME910PZT Datasheet - Fairchild Semiconductor

MOSFET

* Max rDS(on) = 24 mΩ at VGS = -4.5 V, ID = -8 A

* Max rDS(on) = 31 mΩ at VGS = -2.5 V, ID = -7 A

* Max rDS(on) = 45 mΩ at VGS = -1.8 V, ID = -6 A

* Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin

* HBM ESD protection level > 2 kV typical

FDME910PZT

Fairchild Semiconductor

181.48 KB

Mosfet.

📁 Related Datasheet

FDME910PZT P-Channel MOSFET (ON Semiconductor)

FDME910PZT-P P-Channel MOSFET (ON Semiconductor)

FDME910PZT-P-Q P-Channel MOSFET (ON Semiconductor)

FDME905PT MOSFET (Fairchild Semiconductor)

FDME905PT P-Channel MOSFET (ON Semiconductor)

FDME1023PZT Dual P-Channel PowerTrench MOSFET (Fairchild Semiconductor)

FDME1023PZT Dual P-Channel MOSFET (ON Semiconductor)

FDME1024NZT Dual N-Channel Power Trench MOSFET (Fairchild Semiconductor)

FDME1024NZT Dual N-Channel MOSFET (ON Semiconductor)

FDME1034CZT Complementary PowerTrench MOSFET (Fairchild Semiconductor)

TAGS

FDME910PZT MOSFET Fairchild Semiconductor

Image Gallery