FDMS3006SDC mosfet equivalent, n-channel mosfet.
* Dual CoolTM Top Side Cooling PQFN package
* Max rDS(on) = 1.9 mΩ at VGS = 10 V, ID = 30 A
* Max rDS(on) = 2.7 mΩ at VGS = 4.5 V, ID = 26 A
* High perfor.
* Synchronous Rectifier for DC/DC Converters
* Telecom Secondary Side Rectification
* High End Server/Wor.
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching pe.
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