Datasheet Details
| Part number | FDMS6673BZ |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 598.88 KB |
| Description | P-Channel MOSFET |
| Datasheet | FDMS6673BZ_FairchildSemiconductor.pdf |
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Overview: FDMS6673BZ P-Channel PowerTrench® MOSFET FDMS6673BZ P-Channel PowerTrench® MOSFET -30 V, -82 A, 6.
| Part number | FDMS6673BZ |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 598.88 KB |
| Description | P-Channel MOSFET |
| Datasheet | FDMS6673BZ_FairchildSemiconductor.pdf |
|
|
|
Max rDS(on) = 6.8 m: at VGS = -10 V, ID = -15.2 A Max rDS(on) = 12.5 m: at VGS = -4.5 V, ID = -11.2 A Advanced Package and Silicon Combination for Low rDS(on) HBM ESD Protection Level of 8 kV Typical(Note 3) MSL1 Robust Package Design RoHS Compliant The FDMS6673BZ has been designed to minimize losses in load switch applications.
Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) and ESD protection.
Applications Load Switch in Notebook and Server Notebook Battery Pack Power Management D D D D D 55 D 66 G S S S Pin 1 D7 D 88 Top Bottom Power 56 44 G 33 S 22 S 11 S MOSFET Maximum Ratings TC = 25 °C unless otherwise noted.
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