FDMS6673BZ mosfet equivalent, p-channel mosfet.
General Description
* Max rDS(on) = 6.8 m: at VGS = -10 V, ID = -15.2 A
* Max rDS(on) = 12.5 m: at VGS = -4.5 V, ID = -11.2 A
* Advanced Package and Silicon.
Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) and ESD protection.
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