FDMS6681Z

P-Channel MOSFET

ON Semiconductor

* Max rDS(on) = 3.2 mW at VGS =

* 10 V, ID =

* 21.1 A

* Max rDS(on) = 5.0 mW at VGS =

* 4.5 V, ID =

* 15.7 A

* Advanced Package and Silicon Combination for Low rDS(on)

* HBM ESD Protection Level of 8 kV Typical (Note 3)

* MSL1 Robus

FDMS6681Z

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P-channel mosfet.

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FDMS6681Z P-Channel MOSFET ON Semiconductor

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