FDMS6681Z Datasheet (Fairchild Semiconductor)

FDMS6681Z, P-Channel MOSFET

The FDMS6681Z has been designed to minimize losses in load switch applications.

Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) and ESD protection.

Applications * Load Switch in Notebook and Server * Notebook Battery Pack Power Ma

FDMS6681Z Features

* Max rDS(on) = 3.2 m: at VGS = -10 V, ID = -21.1 A

* Max rDS(on) = 5.0 m: at VGS = -4.5 V, ID = -15.7 A

* Advanced Package and Silicon combination for low rDS(on)

* HBM ESD protection level of 8kV typical(note 3)

* MSL1 robust package design

* RoHS Co