FDMS8018 mosfet equivalent, mosfet.
* Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A
* Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 26 A
* Advanced Package and Silicon Combination for Low rDS(on)
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* VRM Vcore Switching for Desktop and Server
* OringFET / Load Switching
* DC-DC Conversion
* Motor Brid.
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charg.
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