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FDMS8018 - MOSFET

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed ang body diod

Features

  • Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A.
  • Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 26 A.
  • Advanced Package and Silicon Combination for Low rDS(on) and High Efficiency.
  • Next Generation Enhanced Body Diode Technology, Engineered for Soft Recovery.
  • MSL1 Robust Package Design.
  • 100% UIL Tested.
  • RoHS Compliant General.

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Full PDF Text Transcription

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FDMS8018 N-Channel PowerTrench® MOSFET December 2015 FDMS8018 N-Channel PowerTrench® MOSFET 30 V, 175 A, 1.8 mΩ Features „ Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A „ Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 26 A „ Advanced Package and Silicon Combination for Low rDS(on) and High Efficiency „ Next Generation Enhanced Body Diode Technology, Engineered for Soft Recovery „ MSL1 Robust Package Design „ 100% UIL Tested „ RoHS Compliant General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed ang body diode reverse recovery performance.
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