FDMS8018 Key Features
- Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A
- Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 26 A
- Advanced Package and Silicon bination for Low rDS(on)
- Next Generation Enhanced Body Diode Technology, Engineered for Soft Recovery
- MSL1 Robust Package Design
- 100% UIL Tested
- RoHS pliant