FDMS86101A Datasheet - Fairchild Semiconductor

N-Channel MOSFET

FDMS86101A General Description

* Shielded Gate MOSFET Technology * Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A * Max rDS(on) = 13.5 mΩ at VGS = 6 V, ID = 9.5 A * Advanced Package and Silicon combination for low rDS(on) and high efficiency This N-Channel MOSFET is produced using Fairchild Semicond.

FDMS86101A Datasheet (335.59 KB)

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FDMS86101A

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Fairchild Semiconductor

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335.59 KB

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N-channel mosfet.
FDMS86101A N-Channel Shielded Gate PowerTrench® MOSFET FDMS86101A N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 60 A, 8 mΩ October 2014 Featur.

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FDMS86101A N-Channel MOSFET Fairchild Semiconductor

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FDMS86101A General Description

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