FDMS86101A Datasheet | Fairchild Semiconductor

Features General Description - Shielded Gate MOSFET Technology - Max r DS(on) = 8 mΩ at VGS = 10 V, ID = 13 A - Max r DS(on) = 13.5 mΩ at VGS = 6 V, ID = 9.5 A - Advanced Package and Silicon bination for low r DS(on) and high efficiency This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. - MSL1 robust package design - 100% UIL tested - 100% Rg tested Application - DC-DC Conversion - Ro HS pliant Top Pin 1 Bottom Pin 1 Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25...