FDMS86103L Overview
Description
Shielded Gate MOSFET Technology - Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 12 A - Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 10 A - Advanced Package and Silicon combination for low rDS(on) and high efficiency This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
