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Fairchild Semiconductor Electronic Components Datasheet

FDMS86103L Datasheet

N-Channel Shielded Gate PowerTrench MOSFET

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FDMS86103L
N-Channel Shielded Gate PowerTrench® MOSFET
100 V, 49 A, 8 mΩ
October 2014
Features
General Description
„ Shielded Gate MOSFET Technology
„ Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 12 A
„ Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 10 A
„ Advanced Package and Silicon combination for low rDS(on)
and high efficiency
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced PowerTrench® process that
incorporates Shielded Gate technology. This process has been
optimized for the on-state resistance and yet maintain superior
switching performance.
„ MSL1 robust package design
„ 100% UIL tested
„ RoHS Compliant
Application
„ DC-DC Conversion
Top Bottom
Pin 1
S
S
S
G
S
S
D
D
D
D
D
D
Power 56
SD
GD
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
100
±20
49
12
100
312
104
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.2
50
°C/W
Device Marking
FDMS86103L
Device
FDMS86103L
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2010 Fairchild Semiconductor Corporation
FDMS86103L Rev.C2
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FDMS86103L Datasheet

N-Channel Shielded Gate PowerTrench MOSFET

No Preview Available !

Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 μA, VGS = 0 V
ID = 250 μA, referenced to 25 °C
VDS = 80 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
100
V
68 mV/°C
1
±100
μA
nA
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 μA
ID = 250 μA, referenced to 25 °C
VGS = 10 V, ID = 12 A
VGS = 4.5 V, ID = 10 A
VGS = 10 V, ID = 12 A, TJ = 125 °C
VDS = 5 V, ID = 12 A
1.0
1.9
-7
6.4
8.4
10.6
59
3.0 V
mV/°C
8
11 mΩ
14
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 50 V, VGS = 0 V,
f = 1 MHz
2790
469
22
1.3
3710
625
35
pF
pF
pF
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 50 V, ID = 12 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 5 V VDD = 50 V,
ID = 12 A
13 23 ns
7.2 15
ns
35 57 ns
6 13 ns
43 60 nC
23 32 nC
7.5 nC
7 nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 2 A
VGS = 0 V, IS = 12 A
(Note 2)
(Note 2)
0.70 1.2
0.78 1.3
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 12 A, di/dt = 100 A/μs
57 90 ns
68 108 nC
Notes:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 50 °C/W when mounted on a
1 in2 pad of 2 oz copper.
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting TJ = 25 °C, L = 1 mH, IAS = 25 A, VDD = 90 V, VGS = 10 V
©2010 Fairchild Semiconductor Corporation
FDMS86103L Rev.C2
2
www.fairchildsemi.com


Part Number FDMS86103L
Description N-Channel Shielded Gate PowerTrench MOSFET
Maker Fairchild Semiconductor
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