FDMS86103L
Features
General Description
- Shielded Gate MOSFET Technology
- Max r DS(on) = 8 mΩ at VGS = 10 V, ID = 12 A
- Max r DS(on) = 11 mΩ at VGS = 4.5 V, ID = 10 A
- Advanced Package and Silicon bination for low r DS(on) and high efficiency
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
- MSL1 robust package design
- 100% UIL tested
- Ro HS pliant
Application
- DC-DC Conversion
Top
Bottom
Pin 1
Power 56
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted.
Symbol VDS VGS
EAS PD TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous Drain Current -Continuous
-Continuous -Pulsed
TC = 25 °C TC = 100 °C TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA =...
