FDMS86103L Datasheet - Fairchild Semiconductor

N-Channel MOSFET

FDMS86103L General Description

* Shielded Gate MOSFET Technology * Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 12 A * Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 10 A * Advanced Package and Silicon combination for low rDS(on) and high efficiency This N-Channel MOSFET is produced using Fairchild Semicondu.

FDMS86103L Datasheet (317.25 KB)

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FDMS86103L

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Fairchild Semiconductor

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317.25 KB

Description:

N-channel mosfet.
FDMS86103L N-Channel Shielded Gate PowerTrench® MOSFET FDMS86103L N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 81 A, 8 mΩ September 2015 Feat.

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FDMS86103L N-Channel MOSFET Fairchild Semiconductor

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FDMS86103L General Description

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