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FDMS86103L - N-Channel MOSFET

General Description

Shielded Gate MOSFET Technology Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 12 A Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 10 A Advanced Package and Silicon combination for low rDS(on) and high efficiency This N-Channel MOSFET is produced using Fairchild Semicondu

Key Features

  • General.

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Full PDF Text Transcription for FDMS86103L (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FDMS86103L. For precise diagrams, tables, and layout, please refer to the original PDF.

FDMS86103L N-Channel Shielded Gate PowerTrench® MOSFET FDMS86103L N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 81 A, 8 mΩ September 2015 Features General Descriptio...

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h® MOSFET 100 V, 81 A, 8 mΩ September 2015 Features General Description „ Shielded Gate MOSFET Technology „ Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 12 A „ Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 10 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.