FDMS86550ET60 Datasheet | Fairchild Semiconductor

Features General Description - Extended TJ rating to 175°C - Max r DS(on) = 1.65 mΩ at VGS = 10 V, ID = 32 A - Max r DS(on) = 2.2 mΩ at VGS = 8 V, ID = 27 A - Advanced Package and Silicon bination for low r DS(on) and high efficiency - MSL1 robust package design - 100% UIL tested - Ro HS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Applications - Primary DC-DC MOSFET - Secondary Synchronous Rectifier - Load Switch Top Pin 1 Bottom S Pin 1 S S G Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous...