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Fairchild Semiconductor Electronic Components Datasheet

FDMS86550ET60 Datasheet

MOSFET

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January 2015
FDMS86550ET60
N-Channel PowerTrench® MOSFET
60 V, 245 A, 1.65 mΩ
Features
General Description
„ Extended TJ rating to 175°C
„ Max rDS(on) = 1.65 mΩ at VGS = 10 V, ID = 32 A
„ Max rDS(on) = 2.2 mΩ at VGS = 8 V, ID = 27 A
„ Advanced Package and Silicon combination for low rDS(on)
and high efficiency
„ MSL1 robust package design
„ 100% UIL tested
„ RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Applications
„ Primary DC-DC MOSFET
„ Secondary Synchronous Rectifier
„ Load Switch
Top
Pin 1
Bottom
S Pin 1
S
S
G
S
S
D
D
D
D
Power 56
S
G
D
D
D
D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Continuous
-Pulsed
TC = 25 °C
TC = 100 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 5)
(Note 5)
(Note 1a)
(Note 4)
(Note 3)
(Note 1a)
Ratings
60
±20
245
173
32
1068
937
187
3.3
-55 to +175
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
0.8
45
°C/W
Device Marking
FDMS86550ET
Device
FDMS86550ET60
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2015 Fairchild Semiconductor Corporation
FDMS86550ET60 Rev. C
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FDMS86550ET60 Datasheet

MOSFET

No Preview Available !

Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 μA, VGS = 0 V
ID = 250 μA, referenced to 25 °C
VDS = 48 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
60
V
31 mV/°C
1
±100
μA
nA
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 μA
ID = 250 μA, referenced to 25 °C
VGS = 10 V, ID = 32 A
VGS = 8 V, ID = 27 A
VGS = 10 V, ID = 32 A, TJ = 125 °C
VDS = 5 V, ID = 32 A
2.5
3.3 4.5
V
-12 mV/°C
1.4 1.65
1.7 2.2 mΩ
2.2 2.6
96 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 30 V, VGS = 0 V,
f = 1 MHz
8235
2140
70
0.1 0.9 2.7
pF
pF
pF
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 30 V, ID = 32 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 8 V VDD = 30 V,
ID = 32 A
43 69
27 43
42 67
11 20
110 154
90 126
40
20
ns
ns
ns
ns
nC
nC
nC
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 2.1 A
VGS = 0 V, IS = 32 A
(Note 2)
(Note 2)
0.7 1.2
0.8 1.3
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 32 A, di/dt = 100 A/μs
68 109
62 99
Notes:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθCA is determined by the user's board design.
V
ns
nC
a. 45 °C/W when mounted on a
1 in2 pad of 2 oz copper.
b. 115 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. EAS of 937 mJ is based on starting TJ = 25 °C, L = 3 mH, IAS = 25 A, VDD = 60 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 79 A.
4. Pulse Id please refers to Figure.11 SOA Curve for detail.
5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design.
©2015 Fairchild Semiconductor Corporation
FDMS86550ET60 Rev. C
2
www.fairchildsemi.com


Part Number FDMS86550ET60
Description MOSFET
Maker Fairchild Semiconductor
Total Page 7 Pages
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