FDMS86500DC N-Channel MOSFET

Fairchild Semiconductor

Description

FDMS86500DC N-Channel Dual CoolTM Power Trench® MOSFET November 2012 FDMS86500DC N-Channel Dual CoolTM Power Trench® MOSFET 60 V, 108 A, 2.3 mΩ Feat.
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process.

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Datasheet Specifications

Part number: FDMS86500DC
Manufacturer: Fairchild Semiconductor
File Size: 312.71 KB
Datasheet: FDMS86500DC_FairchildSemiconductor.pdf
Description: N-Channel MOSFET

Features

* Dual CoolTM Top Side Cooling PQFN package
* Max rDS(on) = 2.3 mΩ at VGS = 10 V, ID = 29 A
* Max rDS(on) = 3.3 mΩ at VGS = 8 V, ID = 24 A
* High performance technology for extremely low rDS(on)
* 100% UIL Tested

Applications

* Synchronous Rectifier for DC/DC Converters
* Telecom Secondary Side Rectification
* High End Server/Workstation Vcore Low Side D D D D S S D D D D Pin 1 S G S S S S Bottom Pin 1 G Top Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS V

FDMS86500DC Distributors

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FDMS86500DC N-Channel MOSFET Fairchild Semiconductor

Fairchild Semiconductor FDMS86500DC-like datasheet