FDMS86181

N-Channel MOSFET

ON Semiconductor

* Shielded Gate MOSFET Technology

* Max rDS(on) = 4.2 mW at VGS = 10 V, ID = 44 A

* Max rDS(on) = 12 mW at VGS = 6 V, ID = 22 A

* ADD

* 50% lower Qrr than other MOSFET suppliers

* Lowers switching noise/EMI

* MSL1 robust package design

FDMS86181

482.80 KB

N-channel mosfet.

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FDMS86181 N-Channel MOSFET ON Semiconductor

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