FDMS86181 - N-Channel MOSFET
FDMS86181 Features
* Shielded Gate MOSFET Technology
* Max rDS(on) = 4.2 mW at VGS = 10 V, ID = 44 A
* Max rDS(on) = 12 mW at VGS = 6 V, ID = 22 A
* ADD
* 50% lower Qrr than other MOSFET suppliers
* Lowers switching noise/EMI
* MSL1 robust package design
