FDMS86181 - N-Channel MOSFET

ON Semiconductor

FDMS86181 Datasheet Preview — Preview of FDMS86181 PDF

Datasheet Details

Part number	FDMS86181
Manufacturer	ON Semiconductor ↗
File Size	482.80 KB
Description	N-Channel MOSFET
Datasheet	FDMS86181-ONSemiconductor.pdf

FDMS86181 Product details

Description

This N Channel MV MOSFET is produced using onsemi’s advanced POWERTRENCH® process that incorporates Shielded Gate technology.This process has been optimized to minimise on state resistance and yet maintain superior switching performance with best in class soft body diode.

Features

Shielded Gate MOSFET Technology.
Max rDS(on) = 4.2 mW at VGS = 10 V, ID = 44 A.
Max rDS(on) = 12 mW at VGS = 6 V, ID = 22 A.
ADD.
50% lower Qrr than other MOSFET suppliers.
Lowers switching noise/EMI.
MSL1 robust package design.
100% UIL tested.
RoHS Compliant.

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Published: Oct 10, 2019 |