FDMS86150ET100 - MOSFET

Fairchild Semiconductor

FDMS86150ET100 Datasheet Preview — Preview of FDMS86150ET100 PDF

Datasheet Details

Part number	FDMS86150ET100
Manufacturer	Fairchild ↗ Semiconductor
File Size	234.74 KB
Description	MOSFET
Datasheet	FDMS86150ET100-FairchildSemiconductor.pdf

FDMS86150ET100 Product details

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. Primary DC-DC MOSFET Secondary Synchronous Rectifier Load Switch Top Pin 1 Bottom S Pin 1 S S G S S D D D D Power 56 S G D D D D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS

Features

Extended TJ rating to 175°C.
Shielded Gate MOSFET Technology.
Max rDS(on) = 4.85 mΩ at VGS = 10 V, ID = 16 A.
Max rDS(on) = 7.8 mΩ at VGS = 6 V, ID = 13 A.
Advanced Package and Silicon combination for low rDS(on) and high efficiency.
MSL1 robust package design.
100% UIL tested.
RoHS Compliant General.

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Published: Jan 10, 2017 |