Datasheet Details
Part number:
FDMS86150ET100
Manufacturer:
Fairchild Semiconductor
File Size:
234.74 KB
Description:
MOSFET
Features
* Extended TJ rating to 175°C
* Shielded Gate MOSFET Technology
* Max rDS(on) = 4.85 mΩ at VGS = 10 V, ID = 16 A
* Max rDS(on) = 7.8 mΩ at VGS = 6 V, ID = 13 A
* Advanced Package and Silicon combination for low rDS(on) and high efficiency
* MSL1 robus
FDMS86150ET100-FairchildSemiconductor.pdf
FDMS86150ET100, MOSFET
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology.
This process has been optimized for the on-state resistance and yet maintain superior switching performance.
Applications * Primary DC-DC MOSFET
FDMS86150ET100 Distributor
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