FDMS86150ET100 MOSFET

Fairchild Semiconductor

Description

FDMS86150ET100 N-Channel Shielded Gate PowerTrench® MOSFET FDMS86150ET100 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 128 A, 4.85 mΩ January .
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology.

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Datasheet Specifications

Part number: FDMS86150ET100
Manufacturer: Fairchild Semiconductor
File Size: 234.74 KB
Datasheet: FDMS86150ET100-FairchildSemiconductor.pdf
Description: MOSFET

Features

* Extended TJ rating to 175°C
* Shielded Gate MOSFET Technology
* Max rDS(on) = 4.85 mΩ at VGS = 10 V, ID = 16 A
* Max rDS(on) = 7.8 mΩ at VGS = 6 V, ID = 13 A
* Advanced Package and Silicon combination for low rDS(on) and high efficiency
* MSL1 robus

Applications

* Primary DC-DC MOSFET
* Secondary Synchronous Rectifier
* Load Switch Top Pin 1 Bottom S Pin 1 S S G S S D D D D Power 56 S G D D D D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ

FDMS86150ET100 Distributors

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FDMS86150ET100 MOSFET Fairchild Semiconductor

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