FDMS86150ET100 Datasheet - Fairchild Semiconductor

FDMS86150ET100 MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. Applications * Primary DC-DC MOSFET

FDMS86150ET100 Features

* Extended TJ rating to 175°C

* Shielded Gate MOSFET Technology

* Max rDS(on) = 4.85 mΩ at VGS = 10 V, ID = 16 A

* Max rDS(on) = 7.8 mΩ at VGS = 6 V, ID = 13 A

* Advanced Package and Silicon combination for low rDS(on) and high efficiency

* MSL1 robus

FDMS86150ET100 Datasheet (234.74 KB)