FDMS86255 N-Channel MOSFET

ON Semiconductor

Description

DATA SHEET www.onsemi.com MOSFET * N-Channel, Shielded Gate, POWERTRENCH® 150 V, 62 A, 12.4 mW FDMS86255 .
This N. Channel MOSFET is produced using onsemi advanced POWERTRENCH process that incorporates Shielded Gate technology.

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Datasheet Specifications

Part number: FDMS86255
Manufacturer: ON Semiconductor ↗
File Size: 423.93 KB
Datasheet: FDMS86255-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* Shielded Gate MOSFET Technology
* Max RDS(on) = 12.4 mW at VGS = 10 V, ID = 10 A
* Max RDS(on) = 15.5 mW at VGS = 6 V, ID = 8 A
* Advanced Package and Silicon Combination for Low RDS(on) and High Efficiency
* Next Generation Enhanced Body Diode Technology, E

Applications

* OringFET / Load Switching
* Synchronous Rectification
* DC
* DC Conversion Pin 1 Pin 1 SSS G DDD D Top Bottom PQFN8 5X6, 1.27P CASE 483AG S D S D S D G D MARKING DIAGRAM $Y&Z&3&K $Y = Logo &Z = Assembly Location &3 = Date Code (Year and Week) &K

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FDMS86255 N-Channel MOSFET ON Semiconductor

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