FDMS86255

N-Channel MOSFET

ON Semiconductor

* Shielded Gate MOSFET Technology

* Max RDS(on) = 12.4 mW at VGS = 10 V, ID = 10 A

* Max RDS(on) = 15.5 mW at VGS = 6 V, ID = 8 A

* Advanced Package and Silicon Combination for Low RDS(on) and High Efficiency

* Next Generation Enhanced Body Diode Technology, E

FDMS86255

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N-channel mosfet.

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FDMS86255 N-Channel MOSFET ON Semiconductor

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