FDMS86202ET120 Datasheet - Fairchild Semiconductor

MOSFET

FDMS86202ET120 Features

* Extended TJ rating to 175°C

* Shielded Gate MOSFET Technology

* Max rDS(on) = 7.2 mΩ at VGS = 10 V, ID = 13.5 A

* Max rDS(on) = 10.3 mΩ at VGS = 6 V, ID = 11.5 A

* Advanced Package and Silicon combination for low rDS(on) and high efficiency

* MSL1 r

FDMS86202ET120 General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. Application * DC-DC Conversion Top Pin 1 .

FDMS86202ET120 Datasheet (231.91 KB)

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FDMS86202ET120

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Fairchild Semiconductor

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Mosfet.
FDMS86202ET120 N-Channel Shielded Gate PowerTrench® MOSFET January 2015 FDMS86202ET120 N-Channel Shielded Gate PowerTrench® MOSFET 120 V, 102 A, 7.2.

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FDMS86202ET120 MOSFET Fairchild Semiconductor

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FDMS86202ET120 Features

FDMS86202ET120 General Description

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