FDMS86202ET120 MOSFET

Fairchild Semiconductor

Description

FDMS86202ET120 N-Channel Shielded Gate PowerTrench® MOSFET January 2015 FDMS86202ET120 N-Channel Shielded Gate PowerTrench® MOSFET 120 V, 102 A, 7.2.
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.

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Datasheet Specifications

Part number: FDMS86202ET120
Manufacturer: Fairchild Semiconductor
File Size: 231.91 KB
Datasheet: FDMS86202ET120-FairchildSemiconductor.pdf
Description: MOSFET

Features

* Extended TJ rating to 175°C
* Shielded Gate MOSFET Technology
* Max rDS(on) = 7.2 mΩ at VGS = 10 V, ID = 13.5 A
* Max rDS(on) = 10.3 mΩ at VGS = 6 V, ID = 11.5 A
* Advanced Package and Silicon combination for low rDS(on) and high efficiency
* MSL1 r

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FDMS86202ET120 MOSFET Fairchild Semiconductor

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