FDMS86202ET120 Datasheet - Fairchild Semiconductor

FDMS86202ET120 MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. Application * DC-DC Conversion Top Pin 1 .

FDMS86202ET120 Features

* Extended TJ rating to 175°C

* Shielded Gate MOSFET Technology

* Max rDS(on) = 7.2 mΩ at VGS = 10 V, ID = 13.5 A

* Max rDS(on) = 10.3 mΩ at VGS = 6 V, ID = 11.5 A

* Advanced Package and Silicon combination for low rDS(on) and high efficiency

* MSL1 r

FDMS86202ET120-FairchildSemiconductor.pdf