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FDMS86200DC - MOSFET

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FDMS86200DC Product details

Description

Shielded Gate MOSFET Technology Dual CoolTM Top Side Cooling PQFN package Max rDS(on) = 17 mΩ at VGS = 10 V, ID = 9.3 A Max rDS(on) = 25 mΩ at VGS = 6 V, ID = 7.8 A High performance technology for extremely low rDS(on) 100% UIL tested RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.Advancements in both silicon and Dual

Features

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