* General Description
* Shielded Gate MOSFET Technology
* Dual CoolTM Top Side Cooling PQFN package
* Max rDS(on) = 17 mΩ at VGS = 10 V, ID = 9.3 A
* Max rDS(on) = 25 mΩ at VGS = 6 V, ID = 7.8 A
* High performance technology for extremely low rDS(on)
FDMS86200DC Datasheet (229.67 KB)
FDMS86200DC
Fairchild Semiconductor
229.67 KB
Mosfet.
FDMS86200DC N-Channel Dual CoolTM 56 Shielded Gate PowerTrench® MOSFET
July 2015
FDMS86200DC
N-Channel Dual CoolTM 56 Shielded Gate PowerTrench® MOS.
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