FDMS86263P - P-Channel MOSFET

ON Semiconductor

FDMS86263P Datasheet Preview — Preview of FDMS86263P PDF

Datasheet Details

Part number	FDMS86263P
Manufacturer	ON Semiconductor ↗
File Size	409.08 KB
Description	P-Channel MOSFET
Datasheet	FDMS86263P-ONSemiconductor.pdf

FDMS86263P Product details

Description

This P Channel MOSFET is produced using onsemi’s advanced POWERTRENCH technology.This very high density process is especially tailored to minimize on state resistance and optimized for superior switching performance.

Features

Max rDS(on) = 53 mW at VGS =.
10 V, ID =.
4.4 A.
Max rDS(on) = 64 mW at VGS =.
6 V, ID =.
4 A.
Very Low Rds.
on in Mid.
Voltage P.
Channel Silicon Technology Optimized for Low Qg.
This Product is Optimised for Fast Switching.

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Published: Dec 20, 2023 |