FDMS86255 Datasheet (Fairchild Semiconductor)

FDMS86255, MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.

This process has been optimized for the on-state resistance and yet maintain superior switching performance.

Applications * OringFET / Load Switching

FDMS86255 Features

* Shielded Gate MOSFET Technology

* Max rDS(on) = 12.4 mΩ at VGS = 10 V, ID = 10 A

* Max rDS(on) = 15.5 mΩ at VGS = 6 V, ID = 8 A

* Advanced Package and Silicon combination for low rDS(on) and high efficiency

* Next generation enhanced body diode technology, e