FDMS86350

N-Channel MOSFET

ON Semiconductor

* Max RDS(on) = 2.4 mW at VGS = 10 V, ID = 25 A

* Max RDS(on) = 3.2 mW at VGS = 8 V, ID = 22 A

* Advanced Package and Silicon Combination for Low RDS(on) and High Efficiency

* MSL1 Robust Package Design

* 100% UIL Tested

* RoHS Compliant

* Thes

FDMS86350

408.90 KB

N-channel mosfet.

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FDMS86350 N-Channel MOSFET ON Semiconductor

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