FDMS86300DC N-Channel MOSFET

Fairchild Semiconductor

Description

FDMS86300DC N-Channel Dual CoolTM Power Trench® MOSFET March 2012 FDMS86300DC N-Channel Dual CoolTM Power Trench® MOSFET 80 V, 60 A, 3.1 mΩ .
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process.

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Datasheet Specifications

Part number: FDMS86300DC
Manufacturer: Fairchild Semiconductor
File Size: 318.11 KB
Datasheet: FDMS86300DC_FairchildSemiconductor.pdf
Description: N-Channel MOSFET

Features

* Dual CoolTM Top Side Cooling PQFN package
* Max rDS(on) = 3.1 mΩ at VGS = 10 V, ID = 24 A
* Max rDS(on) = 4.0 mΩ at VGS = 8 V, ID = 21 A
* High performance technology for extremely low rDS(on)
* 100% UIL Tested

Applications

* Synchronous Rectifier for DC/DC Converters
* Telecom Secondary Side Rectification
* High End Server/Workstation Vcore Low Side D D D D S S D D D D Pin 1 S G S S S S Bottom Pin 1 G Top Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS V

FDMS86300DC Distributors

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FDMS86300DC N-Channel MOSFET Fairchild Semiconductor

Fairchild Semiconductor FDMS86300DC-like datasheet