FDMS86300DC Datasheet, Mosfet, Fairchild Semiconductor

FDMS86300DC Features

• Mosfet
• Dual CoolTM Top Side Cooling PQFN package
• Max rDS(on) = 3.1 mΩ at VGS = 10 V, ID = 24 A
• Max rDS(on) = 4.0 mΩ at VGS = 8 V, ID = 21 A
• High perform

PDF File Details

Part number:

FDMS86300DC

Manufacturer:

Fairchild Semiconductor

File Size:

318.11kb

Download:

📄 Datasheet

Description:

N-channel mosfet. This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Du

FDMS86300DC Application

• Applications
• Synchronous Rectifier for DC/DC Converters
• Telecom Secondary Side Rectification
• High End Server/Workstati

TAGS

FDMS86300DC

Fairchild Semiconductor

📁 Related Datasheet

FDMS86300DC - N-Channel MOSFET (ON Semiconductor)
MOSFET - POWERTRENCH) Single N-Channel, DUAL COOL) 80 V, 3.1 mW, 110 A FDMS86300DC General Description This N−Channel MOSFET is produced using onsemi’.

FDMS86300 - N-Channel MOSFET (Fairchild Semiconductor)
FDMS86300 N-Channel PowerTrench® MOSFET FDMS86300 N-Channel PowerTrench® MOSFET 80 V, 122 A, 3.9 mΩ Features „ Max rDS(on) = 3.9 mΩ at VGS = 10 V, ID.

FDMS86310 - N-Channel MOSFET (Fairchild Semiconductor)
FDMS86310 N-Channel PowerTrench® MOSFET FDMS86310 N-Channel PowerTrench® MOSFET 80 V, 50 A, 4.8 mΩ Features „ Max rDS(on) = 4.8 mΩ at VGS = 10 V, ID .

FDMS86320 - N-Channel MOSFET (Fairchild Semiconductor)
FDMS86320 N-Channel PowerTrench® MOSFET October 2014 FDMS86320 N-Channel PowerTrench® MOSFET 80 V, 44 A, 11.7 mΩ Features „ Max rDS(on) = 11.7 mΩ a.

FDMS86322 - N-Channel MOSFET (Fairchild Semiconductor)
FDMS86322 N-Channel Shielded Gate PowerTrench® MOSFET FDMS86322 N-Channel Shielded Gate PowerTrench® MOSFET 80 V, 60 A, 7.65 mΩ October 2014 Featur.

FDMS86350 - N-Channel MOSFET (Fairchild Semiconductor)
FDMS86350 N-Channel PowerTrench® MOSFET April 2013 FDMS86350 N-Channel PowerTrench® MOSFET 80 V, 80 A, 2.4 mΩ Features General Description This N-Ch.

FDMS86350 - N-Channel MOSFET (ON Semiconductor)
MOSFET – N-Channel, POWERTRENCH® 80 V, 130 A, 2.4 mW FDMS86350 Description This N−Channel MOSFET is produced using onsemi advanced POWERTRENCH® proces.

FDMS86350ET80 - MOSFET (Fairchild Semiconductor)
FDMS86350ET80 N-Channel PowerTrench® MOSFET January 2015 FDMS86350ET80 N-Channel PowerTrench® MOSFET 80 V, 198 A, 2.4 mΩ Features General Descript.

FDMS86368 - N-Channel PowerTrench MOSFET (Fairchild Semiconductor)
FDMS86368_F085 N-Channel PowerTrench® MOSFET FDMS86368_F085 N-Channel PowerTrench® MOSFET 80 V, 80 A, 4.5 mΩ December 2014 Features „ Typical RDS(o.

FDMS86368-F085 - N-Channel MOSFET (ON Semiconductor)
MOSFET – N-Channel, POWERTRENCH) 80 V, 80 A, 4.5 mW FDMS86368-F085 Features • Typical RDS(on) = 3.7 mW at VGS = 10 V, ID = 80 A • Typical Qg(tot) = 5.