Datasheet Details
| Part number | FDMS86350 |
|---|---|
| Manufacturer | Fairchild ↗ Semiconductor |
| File Size | 290.48 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 FDMS86350_FairchildSemiconductor.pdf
|
| Part number | FDMS86350 |
|---|---|
| Manufacturer | Fairchild ↗ Semiconductor |
| File Size | 290.48 KB |
| Description | N-Channel MOSFET |
| Datasheet |
FDMS86350_FairchildSemiconductor.pdf
|
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 25 A Max rDS(on) = 3.2 mΩ at VGS = 8 V, ID = 22 A Advanced Package and Silicon combination for low rDS(on) and high efficiency MSL1 robust package design 100% UIL tested RoHS Complia
📁 FDMS86350 Similar Datasheet