Datasheet Details
| Part number | FDMS86350ET80 |
|---|---|
| Manufacturer | Fairchild ↗ Semiconductor |
| File Size | 224.00 KB |
| Description | MOSFET |
| Datasheet |
 FDMS86350ET80-FairchildSemiconductor.pdf
|
| Part number | FDMS86350ET80 |
|---|---|
| Manufacturer | Fairchild ↗ Semiconductor |
| File Size | 224.00 KB |
| Description | MOSFET |
| Datasheet |
FDMS86350ET80-FairchildSemiconductor.pdf
|
Extended TJ rating to 175°C Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 25 A Max rDS(on) = 3.2 mΩ at VGS = 8 V, ID = 22 A Advanced Package and Silicon combination for low rDS(on) and high efficiency MSL1 robust package design 100% UIL tested RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet
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