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FDMS86101DC N-Channel MOSFET

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Description

MOSFET - N-Channel, POWERTRENCH), DUAL COOL) 56 Shielded Gate 100 V, 60 A, 7.5 mW FDMS86101DC General .
This N. Channel MOSFET is produced using onsemi’s advanced POWERTRENCH® process that incorporates Shielded Gate technology.

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Features

* Shielded Gate MOSFET Technology
* DUAL COOL Top Side Cooling PQFN package
* Max RDS(on) = 7.5 mW at VGS = 10 V, ID = 14.5 A
* Max RDS(on) = 12 mW at VGS = 6 V, ID = 11.5 A
* High performance technology for extremely low RDS(on)
* 100% UIL Tested

Applications

* Primary DC
* DC MOSFET
* Secondary Synchronous Rectifier
* Load Switch DATA SHEET www. onsemi. com ELECTRICAL CONNECTION S D S D S D G D Pin 1 N-Channel MOSFET DDDD GSS S Pin 1 Top Bottom DFN8 5.1x6.15 (Dual Cool 56) CASE 506EG MARKING DIAGRAM ÉÉÉÉ2H

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