FDMS86101DC

N-Channel MOSFET

ON Semiconductor

FDMS86101DC Features

* Shielded Gate MOSFET Technology

* DUAL COOL Top Side Cooling PQFN package

* Max RDS(on) = 7.5 mW at VGS = 10 V, ID = 14.5 A

* Max RDS(on) = 12 mW at VGS = 6 V, ID = 11.5 A

* High performance technology for extremely low RDS(on)

* 100% UIL Tested

FDMS86101DC General Description

This N

*Channel MOSFET is produced using onsemi’s advanced POWERTRENCH® process that incorporates Shielded Gate technology. Advancements in both silicon and DUAL COOL® package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extr.

FDMS86101DC Datasheet (458.66 KB)