FDMS86101

N-Channel MOSFET

ON Semiconductor

* Max RDS(on) = 8 mW at VGS = 10 V, ID = 13 A

* Max RDS(on) = 13.5 mW at VGS = 6 V, ID = 9.5 A

* Advanced Package and Silicon Combination for Low RDS(on) and High Efficiency

* MSL1 Robust Package Design

* 100% UIL Tested

* 100% Rg Tested

* Thes

FDMS86101

469.98 KB

N-channel mosfet.

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FDMS86101 N-Channel MOSFET ON Semiconductor

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