FDMS86101 N-Channel MOSFET

ON Semiconductor

Description

MOSFET * N-Channel, POWERTRENCH) 100 V, 60 A, 8 mW FDMS86101 General .
This N. Channel MOSFET is produced using onsemi’s advanced POWERTRENCH® process that has been especially tailored to minimize the on. st.

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Datasheet Specifications

Part number: FDMS86101
Manufacturer: ON Semiconductor ↗
File Size: 469.98 KB
Datasheet: FDMS86101-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* Max RDS(on) = 8 mW at VGS = 10 V, ID = 13 A
* Max RDS(on) = 13.5 mW at VGS = 6 V, ID = 9.5 A
* Advanced Package and Silicon Combination for Low RDS(on) and High Efficiency
* MSL1 Robust Package Design
* 100% UIL Tested
* 100% Rg Tested
* Thes

Applications

* DC
* DC Conversion MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current: Continuous, TC = 25°C Continuous, TA = 25°C (Note 1a) Pulsed 100 V ±20 V A 60 12.4 200 EAS Singl

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FDMS86101 N-Channel MOSFET ON Semiconductor

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