FDMS86101DC Datasheet - Fairchild Semiconductor

FDMS86101DC N-Channel MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient th.

FDMS86101DC Features

* Dual CoolTM Top Side Cooling PQFN package

* Max rDS(on) = 7.5 mΩ at VGS = 10 V, ID = 14.5 A

* Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 11.5 A

* High performance technology for extremely low rDS(on)

* 100% UIL Tested

* RoHS Compliant General Descriptio

FDMS86101DC_FairchildSemiconductor.pdf