FDMS86101DC N-Channel MOSFET

Fairchild Semiconductor

Description

FDMS86101DC N-Channel Dual CoolTM Power Trench® MOSFET February 2012 FDMS86101DC N-Channel Dual CoolTM Power Trench® MOSFET 100 V, 60 A, 7.5 mΩ Feat.
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process.

📥 Download Datasheet

FDMS86101DC Datasheet Preview — Preview of FDMS86101DC PDF

Datasheet Specifications

Part number: FDMS86101DC
Manufacturer: Fairchild Semiconductor
File Size: 324.00 KB
Datasheet: FDMS86101DC_FairchildSemiconductor.pdf
Description: N-Channel MOSFET

Features

* Dual CoolTM Top Side Cooling PQFN package
* Max rDS(on) = 7.5 mΩ at VGS = 10 V, ID = 14.5 A
* Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 11.5 A
* High performance technology for extremely low rDS(on)
* 100% UIL Tested
* RoHS Compliant General Descriptio

Applications

* Primary DC-DC MOSFET
* Secondary Synchronous Rectifier
* Load Switch D D D D S S D D D D Pin 1 S G S S S S Bottom Pin 1 G Top Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltag

FDMS86101DC Distributors

📁 Related Datasheet

FDMS86101 FDMS86163P FDMS86181 FDMS86200 FDMS86200DC FDMS86255

📌 All Tags

FDMS86101DC N-Channel MOSFET Fairchild Semiconductor

Fairchild Semiconductor FDMS86101DC-like datasheet