FDMS86101DC - N-Channel MOSFET
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process.
Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient th
FDMS86101DC Features
* Dual CoolTM Top Side Cooling PQFN package
* Max rDS(on) = 7.5 mΩ at VGS = 10 V, ID = 14.5 A
* Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 11.5 A
* High performance technology for extremely low rDS(on)
* 100% UIL Tested
* RoHS Compliant General Descriptio
