FDMS86200DC Datasheet - ON Semiconductor

FDMS86200DC N-Channel MOSFET

This N *Channel MOSFET is produced using onsemi’s advanced POWERTRENCH® process that incorporates Shielded Gate technology. Advancements in both silicon and DUAL COOL® package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extr.

FDMS86200DC Features

* Shielded Gate MOSFET Technology

* DUAL COOL® Top Side Cooling DFN8 Package

* Max rDS(on) = 17 mW at VGS = 10 V, ID = 9.3 A

* Max rDS(on) = 25 mW at VGS = 6 V, ID = 7.8 A

* High Performance Technology for Extremely Low rDS(on)

* 100% UIL Tested

FDMS86200DC-ONSemiconductor.pdf