FDMS86255ET150 MOSFET

Fairchild Semiconductor

Description

FDMS86255ET150 N-Channel Shielded Gate PowerTrench® MOSFET January 2015 FDMS86255ET150 N-Channel Shielded Gate PowerTrench® MOSFET 150 V, 63 A, 12.4.
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.

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Datasheet Specifications

Part number: FDMS86255ET150
Manufacturer: Fairchild Semiconductor
File Size: 221.73 KB
Datasheet: FDMS86255ET150-FairchildSemiconductor.pdf
Description: MOSFET

Features

* Extended TJ rating to 175°C
* Shielded Gate MOSFET Technology
* Max rDS(on) = 12.4 mΩ at VGS = 10 V, ID = 10 A
* Max rDS(on) = 15.5 mΩ at VGS = 6 V, ID = 8 A
* Advanced Package and Silicon combination for low rDS(on) and high efficiency
* Next genera

Applications

* OringFET / Load Switching
* Synchronous rectification
* DC-DC Conversion Top Pin 1 Bottom S Pin 1 S S G S S D D D D Power 56 S G D D D D MOSF

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FDMS86255ET150 MOSFET Fairchild Semiconductor

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