FDMS86255ET150 Datasheet - Fairchild Semiconductor

MOSFET

FDMS86255ET150 Features

* Extended TJ rating to 175°C

* Shielded Gate MOSFET Technology

* Max rDS(on) = 12.4 mΩ at VGS = 10 V, ID = 10 A

* Max rDS(on) = 15.5 mΩ at VGS = 6 V, ID = 8 A

* Advanced Package and Silicon combination for low rDS(on) and high efficiency

* Next genera

FDMS86255ET150 General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. Applications * OringFET / Load Switching

FDMS86255ET150 Datasheet (221.73 KB)

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FDMS86255ET150

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Fairchild Semiconductor

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221.73 KB

Description:

Mosfet.
FDMS86255ET150 N-Channel Shielded Gate PowerTrench® MOSFET January 2015 FDMS86255ET150 N-Channel Shielded Gate PowerTrench® MOSFET 150 V, 63 A, 12.4.

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FDMS86255ET150 MOSFET Fairchild Semiconductor

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FDMS86255ET150 Features

FDMS86255ET150 General Description

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