Datasheet Details
Part number:
FDMS86255ET150
Manufacturer:
Fairchild Semiconductor
File Size:
221.73 KB
Description:
MOSFET
Features
* Extended TJ rating to 175°C
* Shielded Gate MOSFET Technology
* Max rDS(on) = 12.4 mΩ at VGS = 10 V, ID = 10 A
* Max rDS(on) = 15.5 mΩ at VGS = 6 V, ID = 8 A
* Advanced Package and Silicon combination for low rDS(on) and high efficiency
* Next genera
FDMS86255ET150-FairchildSemiconductor.pdf
FDMS86255ET150, MOSFET
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.
This process has been optimized for the on-state resistance and yet maintain superior switching performance.
Applications * OringFET / Load Switching
FDMS86255ET150 Distributor
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