FDMS86255ET150 Datasheet - Fairchild Semiconductor

FDMS86255ET150 MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. Applications * OringFET / Load Switching

FDMS86255ET150 Features

* Extended TJ rating to 175°C

* Shielded Gate MOSFET Technology

* Max rDS(on) = 12.4 mΩ at VGS = 10 V, ID = 10 A

* Max rDS(on) = 15.5 mΩ at VGS = 6 V, ID = 8 A

* Advanced Package and Silicon combination for low rDS(on) and high efficiency

* Next genera

FDMS86255ET150-FairchildSemiconductor.pdf