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FDMS86202 MOSFET

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Description

FDMS86202 N-Channel Shielded Gate PowerTrench® MOSFET July 2014 FDMS86202 N-Channel Shielded Gate PowerTrench® MOSFET 120 V, 64 A, 7.2 mΩ .
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.

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Features

* Shielded Gate MOSFET Technology
* Max rDS(on) = 7.2 mΩ at VGS = 10 V, ID = 13.5 A
* Max rDS(on) = 10.3 mΩ at VGS = 6 V, ID = 11.5 A
* Advanced Package and Silicon combination for low rDS(on) and high efficiency
* MSL1 robust package design
* 100% UIL

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