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FDMS86202

MOSFET

FDMS86202 Features

* Shielded Gate MOSFET Technology

* Max rDS(on) = 7.2 mΩ at VGS = 10 V, ID = 13.5 A

* Max rDS(on) = 10.3 mΩ at VGS = 6 V, ID = 11.5 A

* Advanced Package and Silicon combination for low rDS(on) and high efficiency

* MSL1 robust package design

* 100% UIL

FDMS86202 General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. Application

* DC-DC Conversion

* R.

FDMS86202 Datasheet (262.63 KB)

Preview of FDMS86202 PDF

Datasheet Details

Part number:

FDMS86202

Manufacturer:

Fairchild Semiconductor

File Size:

262.63 KB

Description:

Mosfet.

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TAGS

FDMS86202 MOSFET Fairchild Semiconductor

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