FDMS86252 Datasheet - Fairchild Semiconductor

N-Channel MOSFET

FDMS86252 General Description

* Shielded Gate MOSFET Technology * Max rDS(on) = 51 mΩ at VGS = 10 V, ID = 4.6 A * Max rDS(on) = 70 mΩ at VGS = 6 V, ID = 3.9 A * Advanced package and silicon combination for low rDS(on) and high efficiency This N-Channel MOSFET is produced using Fairchild Semicond.

FDMS86252 Datasheet (307.88 KB)

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FDMS86252

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Fairchild Semiconductor

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307.88 KB

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N-channel mosfet.
FDMS86252 N-Channel Shielded Gate PowerTrench® MOSFET October 2014 FDMS86252 N-Channel Shielded Gate PowerTrench® MOSFET 150 V, 16 A, 51 mΩ Featur.

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FDMS86252 N-Channel MOSFET Fairchild Semiconductor

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FDMS86252 General Description

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