FDMS86300DC - N-Channel MOSFET

ON Semiconductor

FDMS86300DC Datasheet Preview — Preview of FDMS86300DC PDF

Datasheet Details

Part number	FDMS86300DC
Manufacturer	ON Semiconductor ↗
File Size	395.66 KB
Description	N-Channel MOSFET
Datasheet	FDMS86300DC-ONSemiconductor.pdf

FDMS86300DC Product details

Description

This N Channel MOSFET is produced using onsemi’s advanced POWERTRENCH® process that incorporates Shielded Gate technology.Advancements in both silicon and DUAL COOL® package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction to Ambient thermal resistance.

Features

DUAL COOL® Top Side Cooling PQFN package.
Max rDS(on) = 3.1 mW at VGS = 10 V, ID = 24 A.
Max rDS(on) = 4.0 mW at VGS = 8 V, ID = 21 A.
High performance technology for extremely low rDS(on).
100% UIL Tested.
RoHS Compliant Typical.

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Published: Dec 20, 2023 |