FDMS86300DC

N-Channel MOSFET

ON Semiconductor

FDMS86300DC Features

* DUAL COOL® Top Side Cooling PQFN package

* Max rDS(on) = 3.1 mW at VGS = 10 V, ID = 24 A

* Max rDS(on) = 4.0 mW at VGS = 8 V, ID = 21 A

* High performance technology for extremely low rDS(on)

* 100% UIL Tested

* RoHS Compliant Typical Applications

FDMS86300DC General Description

This N

*Channel MOSFET is produced using onsemi’s advanced POWERTRENCH® process that incorporates Shielded Gate technology. Advancements in both silicon and DUAL COOL® package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extr.

FDMS86300DC Datasheet (395.66 KB)