FDMS86300 N-Channel MOSFET

Fairchild Semiconductor

Description

FDMS86300 N-Channel PowerTrench® MOSFET FDMS86300 N-Channel PowerTrench® MOSFET 80 V, 122 A, 3.9 mΩ .
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using e.

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Datasheet Specifications

Part number: FDMS86300
Manufacturer: Fairchild Semiconductor
File Size: 362.14 KB
Datasheet: FDMS86300_FairchildSemiconductor.pdf
Description: N-Channel MOSFET

Features

* Max rDS(on) = 3.9 mΩ at VGS = 10 V, ID = 19 A
* Max rDS(on) = 5.5 mΩ at VGS = 8 V, ID = 15.5 A
* Advanced Package and Silicon combination for low rDS(on) and high efficiency
* Next generation enhanced body diode technology, engineered for soft recovery
* MSL

Applications

* OringFET / Load Switching
* DC-DC Conversion Top Bottom Pin 1 S S S G D5 D6 4G 3S Power 56 D D D D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Contin

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FDMS86300 N-Channel MOSFET Fairchild Semiconductor

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