Datasheet Details
Part number:
FDMS86300
Manufacturer:
Fairchild Semiconductor
File Size:
362.14 KB
Description:
N-Channel MOSFET
Features
* Max rDS(on) = 3.9 mΩ at VGS = 10 V, ID = 19 A
* Max rDS(on) = 5.5 mΩ at VGS = 8 V, ID = 15.5 A
* Advanced Package and Silicon combination for low rDS(on) and high efficiency
* Next generation enhanced body diode technology, engineered for soft recovery
* MSL
FDMS86300_FairchildSemiconductor.pdf
FDMS86300, N-Channel MOSFET
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diod
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