FDMS86300 Datasheet - Fairchild Semiconductor

FDMS86300 N-Channel MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diod.

FDMS86300 Features

* Max rDS(on) = 3.9 mΩ at VGS = 10 V, ID = 19 A

* Max rDS(on) = 5.5 mΩ at VGS = 8 V, ID = 15.5 A

* Advanced Package and Silicon combination for low rDS(on) and high efficiency

* Next generation enhanced body diode technology, engineered for soft recovery

* MSL

FDMS86300_FairchildSemiconductor.pdf