FDMS86300 - N-Channel MOSFET

Fairchild Semiconductor

FDMS86300 Datasheet Preview — Preview of FDMS86300 PDF

Datasheet Details

Part number	FDMS86300
Manufacturer	Fairchild ↗ Semiconductor
File Size	362.14 KB
Description	N-Channel MOSFET
Datasheet	FDMS86300_FairchildSemiconductor.pdf

FDMS86300 Product details

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance. OringFET / Load Switching DC-DC Conversion Top Bottom Pin 1 S S S G D5 D6 4G 3S Power 56 D D D D MOSFET Maximum Ratings TA = 2

Features

Max rDS(on) = 3.9 mΩ at VGS = 10 V, ID = 19 A.
Max rDS(on) = 5.5 mΩ at VGS = 8 V, ID = 15.5 A.
Advanced Package and Silicon combination for low rDS(on) and high efficiency.
Next generation enhanced body diode technology, engineered for soft recovery.
MSL1 robust package design.
100% UIL tested.
RoHS Compliant December 2015 General.

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Published: Aug 8, 2013 |