Datasheet Details
| Part number | FDMS86322 |
|---|---|
| Manufacturer | Fairchild ↗ Semiconductor |
| File Size | 340.73 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 FDMS86322_FairchildSemiconductor.pdf
|
| Part number | FDMS86322 |
|---|---|
| Manufacturer | Fairchild ↗ Semiconductor |
| File Size | 340.73 KB |
| Description | N-Channel MOSFET |
| Datasheet |
FDMS86322_FairchildSemiconductor.pdf
|
Shielded Gate MOSFET Technology Max rDS(on) = 7.65 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 7.2 A Advanced Package and Silicon combination for low rDS(on) and high efficiency This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology.This process has been optimized for the on-state resistance and yet maintain superior switching performance.
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