FDMS86322 Datasheet - Fairchild Semiconductor

N-Channel MOSFET

FDMS86322 General Description

* Shielded Gate MOSFET Technology * Max rDS(on) = 7.65 mΩ at VGS = 10 V, ID = 13 A * Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 7.2 A * Advanced Package and Silicon combination for low rDS(on) and high efficiency This N-Channel MOSFET is produced using Fairchild Semicon.

FDMS86322 Datasheet (340.73 KB)

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FDMS86322

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Fairchild Semiconductor

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340.73 KB

Description:

N-channel mosfet.
FDMS86322 N-Channel Shielded Gate PowerTrench® MOSFET FDMS86322 N-Channel Shielded Gate PowerTrench® MOSFET 80 V, 60 A, 7.65 mΩ October 2014 Featur.

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FDMS86322 N-Channel MOSFET Fairchild Semiconductor

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FDMS86322 General Description

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