FDMS86310 Datasheet - Fairchild Semiconductor

FDMS86310 N-Channel MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diod.

FDMS86310 Features

* Max rDS(on) = 4.8 mΩ at VGS = 10 V, ID = 17 A

* Max rDS(on) = 6.7 mΩ at VGS = 8 V, ID = 14 A

* Advanced Package and Silicon combination for low rDS(on) and high efficiency

* Next generation enhanced body diode technology, engineered for soft recovery

* MSL1

FDMS86310_FairchildSemiconductor.pdf