FDMS86310

N-Channel MOSFET

Fairchild Semiconductor

FDMS86310 Features

* Max rDS(on) = 4.8 mΩ at VGS = 10 V, ID = 17 A

* Max rDS(on) = 6.7 mΩ at VGS = 8 V, ID = 14 A

* Advanced Package and Silicon combination for low rDS(on) and high efficiency

* Next generation enhanced body diode technology, engineered for soft recovery

* MSL1

FDMS86310 General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diod.

FDMS86310 Datasheet (326.67 KB)

FDMS86310 Datasheet Preview — Preview of FDMS86310 PDF

Datasheet Details

Part number:

FDMS86310

Manufacturer:

Fairchild Semiconductor

File Size:

326.67 KB

Description:

N-channel mosfet.

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FDMS86310 N-Channel MOSFET Fairchild Semiconductor

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FDMS86310 Features

FDMS86310 General Description

Datasheet Details

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Description:

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