FDMS86310 N-Channel MOSFET

Fairchild Semiconductor

Description

FDMS86310 N-Channel PowerTrench® MOSFET FDMS86310 N-Channel PowerTrench® MOSFET 80 V, 50 A, 4.8 mΩ .
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using e.

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Datasheet Specifications

Part number: FDMS86310
Manufacturer: Fairchild Semiconductor
File Size: 326.67 KB
Datasheet: FDMS86310_FairchildSemiconductor.pdf
Description: N-Channel MOSFET

Features

* Max rDS(on) = 4.8 mΩ at VGS = 10 V, ID = 17 A
* Max rDS(on) = 6.7 mΩ at VGS = 8 V, ID = 14 A
* Advanced Package and Silicon combination for low rDS(on) and high efficiency
* Next generation enhanced body diode technology, engineered for soft recovery
* MSL1

Applications

* Primary Switch
* Synchronous Rectifier
* Motor Switch Top Pin 1 Bottom Pin 1 S S D S S G S D S D Power 56 D D D D G D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to S

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FDMS86310 N-Channel MOSFET Fairchild Semiconductor

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