FDMS86200 - N-Channel MOSFET

ON Semiconductor

FDMS86200 Datasheet Preview — Preview of FDMS86200 PDF

Datasheet Details

Part number	FDMS86200
Manufacturer	ON Semiconductor ↗
File Size	478.46 KB
Description	N-Channel MOSFET
Datasheet	FDMS86200-ONSemiconductor.pdf

FDMS86200 Product details

Description

This N Channel MOSFET is produced using onsemi’s advanced POWERTRENCH® process that incorporates Shielded Gate technology.This process has been optimized for the on state resistance and yet maintain superior switching performance.

Features

Shielded Gate MOSFET Technology.
Max RDS(on) = 18 mW at VGS = 10 V, ID = 9.6 A.
Max RDS(on) = 21 mW at VGS = 6 V, ID = 8.8 A.
Advanced Package and Silicon Combination for Low RDS(on) and High Efficiency.
MSL1 Robust Package Design.
100% UIL Tested.
RoHS Compliant.

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Published: Oct 15, 2019 |