FDMS86200 N-Channel MOSFET

ON Semiconductor

Description

MOSFET * N-Channel, Shielded Gate, POWERTRENCH) 150 V, 35 A, 18 mW FDMS86200 General .
This N. Channel MOSFET is produced using onsemi’s advanced POWERTRENCH® process that incorporates Shielded Gate technology.

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Datasheet Specifications

Part number: FDMS86200
Manufacturer: ON Semiconductor ↗
File Size: 478.46 KB
Datasheet: FDMS86200-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* Shielded Gate MOSFET Technology
* Max RDS(on) = 18 mW at VGS = 10 V, ID = 9.6 A
* Max RDS(on) = 21 mW at VGS = 6 V, ID = 8.8 A
* Advanced Package and Silicon Combination for Low RDS(on) and High Efficiency
* MSL1 Robust Package Design
* 100% UIL Test

Applications

* DC
* DC Conversion MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current:
* Continuous TC = 25°C
* Continuous TA = 25°C (Note 1a)
* Pulsed 150 V ±2

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FDMS86200 N-Channel MOSFET ON Semiconductor

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