FDMS86200 Datasheet - ON Semiconductor

FDMS86200 N-Channel MOSFET

FDMS86200 Features

* Shielded Gate MOSFET Technology

* Max RDS(on) = 18 mW at VGS = 10 V, ID = 9.6 A

* Max RDS(on) = 21 mW at VGS = 6 V, ID = 8.8 A

* Advanced Package and Silicon Combination for Low RDS(on) and High Efficiency

* MSL1 Robust Package Design

* 100% UIL Test

Datasheet Details

FDMS86200

478.46 KB

N-channel mosfet.

📁 Related Datasheet

FDMS86200 N-Channel MOSFET (Fairchild Semiconductor)

FDMS86200DC MOSFET (Fairchild Semiconductor)

FDMS86200DC N-Channel MOSFET (ON Semiconductor)

FDMS86201 N-Channel MOSFET (Fairchild Semiconductor)

FDMS86202 MOSFET (Fairchild Semiconductor)

FDMS86202ET120 MOSFET (Fairchild Semiconductor)

FDMS8622 N-Channel MOSFET (Fairchild Semiconductor)

FDMS86250 N-Channel MOSFET (Fairchild Semiconductor)

TAGS

FDMS86200 FDMS86200 N-Channel MOSFET ON Semiconductor

FDMS86200 Distributor