FDMS86200

N-Channel MOSFET

ON Semiconductor

* Shielded Gate MOSFET Technology

* Max RDS(on) = 18 mW at VGS = 10 V, ID = 9.6 A

* Max RDS(on) = 21 mW at VGS = 6 V, ID = 8.8 A

* Advanced Package and Silicon Combination for Low RDS(on) and High Efficiency

* MSL1 Robust Package Design

* 100% UIL Test

FDMS86200

478.46 KB

N-channel mosfet.

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FDMS86200 N-Channel MOSFET ON Semiconductor

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